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Inhalt des Dokuments

Selected publications on

Auger recombination and impact ionization

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K. Lüdge, E. Schöll:
Quantum-dot lasers -- desynchronized nonlinear dynamics of electrons and holes
IEEE J. Quantum Electron. 45, 1396 (2009)
DOI
K. Lüdge, M. J. P. Bormann, E. Malić, P. Hövel, M. Kuntz, D. Bimberg, A. Knorr, E. Schöll:
Turn-on dynamics and modulation response in semiconductor quantum dot lasers
Phys. Rev. B 78, 035316 (2008)
DOI
E. Malić, M. J. P. Bormann, P. Hövel, M. Kuntz, D. Bimberg, A. Knorr, E. Schöll:
Coulomb damped relaxation oscillations in semiconductor quantum dot lasers
IEEE J. Sel. Top. Quantum Electron. 13, 1242 (2007)
J. Murawski, G. Schwarz, V. Novák, W. Prettl, E. Schöll:
Simulation of longitudinal instabilities in filamentary current flow during low-temperature impurity breakdown in semiconductors
J. Appl. Math. Mech. (ZAMM) 85, 823 (2005)
R. Wetzler, A. Wacker, E. Schöll:
Non-local Auger effect in quantum dot devices
Semicond. Sci. Technol. 19, S43 (2004)
URL
R. Wetzler, A. Wacker, E. Schöll:
Coulomb scattering with remote continuum states in quantum dot devices
J. Appl. Phys. 95, 7966 (2004)
URL
A. Rack, R. Wetzler, A. Wacker, E. Schöll:
Dynamical bistability in quantum-dot structures: Role of Auger processes
Phys. Rev. B 66, 165429 (2002)
G. Schwarz, E. Schöll, V. Novák, W. Prettl:
Streamer motion in Hall effect Corbino geometries
Physica E 12, 182 (2002)
G. Schwarz, C. Lehmann, A. Reimann, E. Schöll, J. Hirschinger, W. Prettl, V. Novák:
Current filamentation in n-GaAs thin films with different contact geometries
Semicond. Sci. Technol. 15, 593 (2000)
URL
G. Schwarz, C. Lehmann, E. Schöll:
Self-organized symmetry-breaking current filamentation and multistability in Corbino disks
Phys. Rev. B 61, 10194 (2000)
URL
R. Redmer, J. R. Madureira, N. Fitzer, S. M. Goodnick, W. Schattke, E. Schöll:
Field effect on the impact ionization rate in semiconductors
J. Appl. Phys. 87, 781 (2000)
F. Prengel, E. Schöll:
Quantum kinetics of intersubband impact ionization in quantum wires
Semicond. Sci. Technol. 14, 379 (1999)
URL
F. Prengel, E. Schöll:
Delayed intersubband relaxation in quantum wires due to quantum kinetic Coulomb scattering
Phys. Rev. B 59, 5806 (1999)
F. Prengel, E. Schöll, T. Kuhn:
Quantum Kinetics of Intra- and Intersubband Coulomb Dynamics in Quantum Wires
phys. status solidi (b) 204, 322 (1997) , Proc. HCIS-10
G. Schwarz, E. Schöll:
Simulation of Current Filaments in Semiconductors with Point Contacts and Corbino Disks
Acta Techn.\ CSAV 42, 669 (1997)
H. Naundorf, R. Gupta, E. Schöll:
A model for hot electron light emission from semiconductor heterostructures
Semicond. Sci. Technol. 13, 548 (1998)
K. Kunihiro, M. Gaa, E. Schöll:
Influence of external circuits on filamentary current flow during impurity breakdown in n-type GaAs
Electronics Letters 33, 1261 (1997)
URL
K. Kunihiro, M. Gaa, E. Schöll:
Formation of current filaments in n-type GaAs under crossed electric and magnetic fields
Phys. Rev. B 55, 2207 (1997)
URL
M. Gaa, E. Schöll:
Traveling carrier density waves in n-GaAs at low-temperature impurity breakdown
Phys. Rev. B 54, 16733 (1996)
M. Gaa, E. Schöll, W. Eberle, J. Hirschinger, W. Prettl:
Spatial structure of impact-ionization induced current filaments in n-GaAs films
Semicond. Sci. Technol. 11, 1646 (1996)
URL
M. Gaa, E. Schöll:
Dynamics of nascent current filaments in low-temperature impurity breakdown
Phys. Rev. B 53, 15971 (1996)
R. E. Kunz, E. Schöll, H. Gajewski, R. Nürnberg:
Low-temperature impurity breakdown in semiconductors: an approach towards efficient device simulation
Sol. State El. 39, 1155 (1996)
R. E. Kunz, E. Schöll:
Dynamics of stochastically induced and spatially inhomogeneous impurity breakdown in semiconductors
Z. Phys. B 99, 185 (1996)
H. Schröder, E. Schöll, T. Kuhn:
Quantum kinetic enhancement of intersubband impact ionization in quantum wires by non-resonant transitions
in Proc. 23rd Int. Conf. on the Physics of Semiconductors, Berlin 1996, edited by M. Scheffler, R. Zimmermann (World Scientific, Singapore, 1996)
H. Schröder, H. Buss, T. Kuhn, E. Schöll:
Coherent dynamics and impact ionization in bulk and low-dimensional semiconductors
in Proc. of the 9th Int. Conf. on Hot Carriers in Semiconductors, edited by K. Hess, J. P. Leburton, U. Ravaioli (Plenum, New York, 1996)
H. Kostial, M. Asche, R. Hey, K. Ploog, B. Kehrer, W. Quade, E. Schöll:
Low temperature breakdown and current filamentation in n-type GaAs with homogeneous and partially ordered Si doping
Semicond. Sci. Technol. 10, 775 (1995)
URL
B. Kehrer, W. Quade, E. Schöll:
Monte Carlo simulation of impact-ionization-induced breakdown and current filamentation in $\delta$-doped GaAs
Phys. Rev. B 51, 7725 (1995)
URL
W. Quade, E. Schöll, F. Rossi, C. Jacoboni:
Quantum theory of impact ionization in coherent high-field semiconductor transport
Phys. Rev. B 50, 7398 (1994)
URL
W. Quade, G. Hüpper, E. Schöll, T. Kuhn:
Monte Carlo simulation of the nonequilibrium phase transition in p-type Ge at impurity breakdown
Phys. Rev. B 49, 13408 (1994)
URL
G. Hüpper, K. Pyragas, E. Schöll:
Complex spatiotemporal dynamics of current filaments in crossed electric and magnetic fields
Phys. Rev. B 48, 17633 (1993)
URL
G. Hüpper, K. Pyragas, E. Schöll:
Complex dynamics of current filaments in the low temperature impurity breakdown regime of semiconductors
Phys. Rev. B 47, 15515 (1993)
URL
T. Kuhn, G. Hüpper, W. Quade, A. Rein, E. Schöll, L. Varani, L. Reggiani:
Microscopic analysis of noise and nonlinear dynamics in p-type Germanium
Phys. Rev. B 48, 1478 (1993)
W. Quade, E. Schöll, M. Rudan:
Impact ionization within the hydrodynamic approach to semiconductor transport
Sol. State El. 36, 1493 (1993)
Paper REI92 not found in database!
G. Hüpper, E. Schöll, A. Rein:
Nonlinear and Chaotic Oscillations in Semiconductors under the Influence of a Transverse Magnetic Field: The Dynamic Hall Effect
Mod. Phys. Lett. B 6, 1001 (1992)
URL
G. Hüpper, E. Schöll:
Dynamic Hall Effect as a Mechanism for Self-Sustained Oscillations and Chaos in Semiconductors
Phys. Rev. Lett. 66, 2372 (1991)
R. E. Kunz, E. Schöll:
Globally coupled dynamics of breathing current filaments in semiconductors
Z. Phys. B 89, 289 (1992)
E. Schöll:
Nonlinear Dynamics, Phase Transitions and Chaos in Semiconductors
in Handbook on Semiconductors, edited by P. T. Landsberg (North Holland, Amsterdam, 1992)
W. Quade, M. Rudan, E. Schöll:
Hydrodynamic Simulation of Impact-Ionization Effects in P-N Junctions
IEEE Trans. CAD 10, 1287 (1991)
H. Naber, E. Schöll:
Mode-locking of self-generated oscillations in a semiconductor model for low-temperature impurity breakdown
Z. Phys. B 78, 305 (1990)
H. Naber, E. Schöll:
Bit-number cumulants as a correlation measure of self-generated oscillations in a semiconductor model for low-temperature impurity breakdown
Z. Phys. B 78, 301 (1990)
E. Schöll, D. Drasdo:
Nonlinear dynamics of breathing current filaments in n-GaAs and p-Ge
Z. Phys. B 81, 183 (1990)
E. Schöll:
From Hot Electron Transport Theory to Macroscopic Nonlinear and Chaotic Behaviour by Impact Ionization in Semiconductors
Sol. State El. 32, 1129 (1989)
E. Schöll:
Theoretical Approaches to Nonlinear and Chaotic Dynamics of Generation-Recombination Processes in Semiconductors
Appl. Phys. A 48, 95 (1989)
G. Hüpper, E. Schöll, L. Reggiani:
Global Bifurcation and Hysteresis of Self-generated Oscillations in a Microscopic Model of Nonlinear Transport in p-Ge
Sol. State El. 32, 1787 (1989)
DOI
E. Schöll:
Instabilities in Semiconductors including Chaotic Phenomena
Physica Scripta T29, 152 (1989)
E. Schöll, W. Quade:
Effect of impact ionization on hot carrier energy and momentum relaxation in semiconductors
J. Phys. C 20, L 861 (1987)
E. Schöll, J. Parisi, B. Röhricht, J. Peinke, R. P. Huebener:
Spatial Correlations of Chaotic Oscillations in the Post-Breakdown Regime of p-Ge
Phys. Lett. A 119, 419 (1987)
URL
E. Schöll:
Impact Ionization Mechanism for Self-Generated Chaos in Semiconductors
Phys. Rev. B 34, 1395 (1986)
E. Schöll:
Equal Areas Rules for Filamentation in SNDC Elements
Sol. State El. 29, 687 (1986)
E. Schöll:
Influence of Boundaries on Dissipative Structures in the Schlögl Model
Z. Phys. B 62, 245 (1986)
E. Schöll:
Stability of Generation-Recombination Induced Dissipative Structures in Semiconductors
Z. Phys. B 52, 321 (1983)
E. Schöll:
Current Layers and Filaments in a Semiconductor Model with an Impact Ionization Induced Instability
Z. Phys. B 48, 153 (1982)
E. Schöll, W. Heisel, W. Prettl:
Impact Ionization Induced Negative Far-Infrared Photoconductivity in n-GaAs
Z. Phys. B 47, 285 (1982)
E. Schöll:
Bistability and Nonequilibrium Phase Transitions in a Semiconductor Recombination Model with Impact Ionization of Donors
Z. Phys. B 46, 23 (1982)
D. J. Robbins, P. T. Landsberg, E. Schöll:
Threshold Switching as a Generation-Recombination Induced Non-Equilibrium Phase Transition (II)
phys. status solidi (a) 65, 353 (1981)
E. Schöll:
Formal Conditions for Non-Equilibrium Phase Transitions
Proc. Roy. Soc. A 365, 511 (1979)
E. Schöll, P. T. Landsberg:
Semiconductor models for first and second order non-equilibrium phase transitions
Proc. Roy. Soc. A 365, 495 (1979)
P. T. Landsberg, D. J. Robbins, E. Schöll:
Threshold Switching as a Generation-Recombination Induced Non-Equilibrium Phase Transition
phys. status solidi (a) 50, 423 (1978)

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