direkt zum Inhalt springen

direkt zum Hauptnavigationsmenü

Sie sind hier

TU Berlin

Inhalt des Dokuments

Selected publications on

Double barrier resonant tunneling diode (DBRT)

View this list as PDF (PDF, 33,3 KB)

 

URL
N. Majer, E. Schöll:
Resonant control of stochastic spatio-temporal dynamics in a tunnel diode by multiple time delayed feedback
Phys. Rev. E 79, 011109 (2009)
DOI
E. Schöll, N. Majer, G. Stegemann:
Extended time delayed feedback control of stochastic dynamics in a resonant tunneling diode
phys. stat. sol. (c) 5, 194 (2008)
DOI E. Schöll, J. Hizanidis, P. Hövel, G. Stegemann:
Pattern formation in semiconductors under the influence of time-delayed feedback control and noise
in Analysis and control of complex nonlinear processes in physics, chemistry and biology, edited by L. Schimansky-Geier, B. Fiedler, J. Kurths, E. Schöll (World Scientific, Singapore, 2007)
DOI
G. Stegemann, E. Schöll:
Two-dimensional spatiotemporal pattern formation in the double-barrier resonant tunneling diode
New J. Phys. 9, 55 (2007)
URL
G. Stegemann, A. G. Balanov, E. Schöll:
Delayed feedback control of stochastic spatiotemporal dynamics in a resonant tunneling diode
Phys. Rev. E 73, 016203 (2006)
URL
G. Stegemann, A. G. Balanov, E. Schöll:
Noise-induced pattern formation in a semiconductor nanostructure
Phys. Rev. E 71, 016221 (2005)
URL
J. Unkelbach, A. Amann, W. Just, E. Schöll:
Time--delay autosynchronization of the spatiotemporal dynamics in resonant tunneling diodes
Phys. Rev. E 68, 026204 (2003)
URL
P. Rodin, E. Schöll:
Comment on ''Lifetime of metastable states in resonant-tunneling structures''
Phys. Rev. B 71, 047301 (2005)
URL
P. Rodin, E. Schöll:
Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures
J. Appl. Phys. 93, 6347 (2003)
E. Schöll, A. Amann, M. Rudolf, J. Unkelbach:
Transverse spatio-temporal instabilities in the double barrier resonant tunneling diode
Physica B 314, 113 (2002)
URL
V. Cheianov, P. Rodin, E. Schöll:
Transverse coupling in bistable resonant-tunneling structures
Phys. Rev. B 62, 9966 (2000)
DOI
M. Meixner, P. Rodin, E. Schöll, A. Wacker:
Lateral current density fronts in globally coupled bistable semiconductors with S- or Z-shaped current voltage characteristic
Eur. Phys. J. B 13, 157 (2000)
URL
A. Wacker, E. Schöll:
Criteria for stability in bistable electrical devices with S- or Z-shaped current voltage characteristic
J. Appl. Phys. 78, 7352 (1995)

Zusatzinformationen / Extras

Direktzugang

Schnellnavigation zur Seite über Nummerneingabe