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Previous research: Growth kinetics on semiconductor surfaces

Growth kinetics on semiconductor surfaces

Applying state-of-the-art methods of growth (e.g. MBE, MOCVD) artificial nanostructures  can be manufactured with high precision, for instance, on semiconductor surfaces.  The kinetic behavior of atoms during epitaxial growth is studied within Monte-Carlo simulations. Particular emphasis is put upon the effect of strain fields, which cause the self-organized formation of islands (quantum dots) [1] in the Stranski-Krastanov growth mode. Moreover, spatial correlation effects as well as the surface roughness of optical multilayered systems are simulated. Control of surface morphologies by time-delayed feedback and the dynamics of tumor growth [2] is also studied.



  • Prof. Dr. D. Bimberg, [3]

    Prof. Dr. W. Richter , [4]

    Prof. Dr. M. Dähne [5]

    (TU Berlin [6]): [7] Quantenpunkte (Experiment)

  • Prof. Dr. H.J. Eichler [8]

    (TU Berlin [9]) [10]: Optische Schichten (Exp.)

  • Prof. Dr. Köhler

    ( [11]HU Berlin [12]) [13]: Experiment

  • Dr. T. Boeck

    (Institut für Kristallzüchtung, Berlin [14]): Wachstum

  • Dr. V.A. Shchukin

    (Ioffe Physico-Technical Institute St. Petersburg, Russland [15]):


  • Prof. Dr. M. Scheffler

    (Fritz-Haber-Institut Berlin [16]);

    ab-initio Rechnungen

  • Prof. Dr. B. Schmittmann [17]

    (Virginia Tech, Blacksburg, USA):

    Universelles Skalenverhalten

  • Prof. Dr. B.G. Liu

    (Chinese Academy of Sciences, Beijing [18]);

    kinetische Monte-Carlo-Simulation unter

    Einschluß von Surfactant-Effekten

  • Dr. D. Drasdo (French National Institute for Computer Sciences and Control, Rocquencourt, France) [19]



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