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| K. Lüdge, E. Schöll: Quantum-dot lasers -- desynchronized nonlinear dynamics of electrons and holes IEEE J. Quantum Electron. 45, 1396 (2009) | |||
| K. Lüdge, M. J. P. Bormann, E. Malić, P. Hövel, M. Kuntz, D. Bimberg, A. Knorr, E. Schöll: Turn-on dynamics and modulation response in semiconductor quantum dot lasers Phys. Rev. B 78, 035316 (2008) | ||
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| E. Malić, M. J. P. Bormann, P. Hövel, M. Kuntz, D. Bimberg, A. Knorr, E. Schöll: Coulomb damped relaxation oscillations in semiconductor quantum dot lasers IEEE J. Sel. Top. Quantum Electron. 13, 1242 (2007) | ||
| J. Murawski, G. Schwarz, V. Novák, W. Prettl, E. Schöll: Simulation of longitudinal instabilities in filamentary current flow during low-temperature impurity breakdown in semiconductors J. Appl. Math. Mech. (ZAMM) 85, 823 (2005) | |||
| R. Wetzler, A. Wacker, E. Schöll: Non-local Auger effect in quantum dot devices Semicond. Sci. Technol. 19, S43 (2004) | |||
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| R. Wetzler, A. Wacker, E. Schöll: Coulomb scattering with remote continuum states in quantum dot devices J. Appl. Phys. 95, 7966 (2004) | ||
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| A. Rack, R. Wetzler, A. Wacker, E. Schöll: Dynamical bistability in quantum-dot structures: Role of Auger processes Phys. Rev. B 66, 165429 (2002) | ||
| G. Schwarz, E. Schöll, V. Novák, W. Prettl: Streamer motion in Hall effect Corbino geometries Physica E 12, 182 (2002) | |||
| G. Schwarz, C. Lehmann, A. Reimann, E. Schöll, J. Hirschinger, W. Prettl, V. Novák: Current filamentation in n-GaAs thin films with different contact geometries Semicond. Sci. Technol. 15, 593 (2000) | |||
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| G. Schwarz, C. Lehmann, E. Schöll: Self-organized symmetry-breaking current filamentation and multistability in Corbino disks Phys. Rev. B 61, 10194 (2000) | ||
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| R. Redmer, J. R. Madureira, N. Fitzer, S. M. Goodnick, W. Schattke, E. Schöll: Field effect on the impact ionization rate in semiconductors J. Appl. Phys. 87, 781 (2000) | ||
| F. Prengel, E. Schöll: Quantum kinetics of intersubband impact ionization in quantum wires Semicond. Sci. Technol. 14, 379 (1999) | |||
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| F. Prengel, E. Schöll: Delayed intersubband relaxation in quantum wires due to quantum kinetic Coulomb scattering Phys. Rev. B 59, 5806 (1999) | ||
| F. Prengel, E. Schöll, T. Kuhn: Quantum Kinetics of Intra- and Intersubband Coulomb Dynamics in Quantum Wires phys. status solidi (b) 204, 322 (1997) , Proc. HCIS-10 | |||
| G. Schwarz, E. Schöll: Simulation of Current Filaments in Semiconductors with Point Contacts and Corbino Disks Acta Techn.\ CSAV 42, 669 (1997) | |||
| H. Naundorf, R. Gupta, E. Schöll: A model for hot electron light emission from semiconductor heterostructures Semicond. Sci. Technol. 13, 548 (1998) | |||
| K. Kunihiro, M. Gaa, E. Schöll: Influence of external circuits on filamentary current flow during impurity breakdown in n-type GaAs Electronics Letters 33, 1261 (1997) | |||
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| K. Kunihiro, M. Gaa, E. Schöll: Formation of current filaments in n-type GaAs under crossed electric and magnetic fields Phys. Rev. B 55, 2207 (1997) | ||
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| M. Gaa, E. Schöll: Traveling carrier density waves in n-GaAs at low-temperature impurity breakdown Phys. Rev. B 54, 16733 (1996) | ||
| M. Gaa, E. Schöll, W. Eberle, J. Hirschinger, W. Prettl: Spatial structure of impact-ionization induced current filaments in n-GaAs films Semicond. Sci. Technol. 11, 1646 (1996) | |||
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| M. Gaa, E. Schöll: Dynamics of nascent current filaments in low-temperature impurity breakdown Phys. Rev. B 53, 15971 (1996) | ||
| R. E. Kunz, E. Schöll, H. Gajewski, R. Nürnberg: Low-temperature impurity breakdown in semiconductors: an approach towards efficient device simulation Sol. State El. 39, 1155 (1996) | |||
| R. E. Kunz, E. Schöll: Dynamics of stochastically induced and spatially inhomogeneous impurity breakdown in semiconductors Z. Phys. B 99, 185 (1996) | |||
| H. Schröder, E. Schöll, T. Kuhn: Quantum kinetic enhancement of intersubband impact ionization in quantum wires by non-resonant transitions in Proc. 23rd Int. Conf. on the Physics of Semiconductors, Berlin 1996, edited by M. Scheffler, R. Zimmermann (World Scientific, Singapore, 1996) | |||
| H. Schröder, H. Buss, T. Kuhn, E. Schöll: Coherent dynamics and impact ionization in bulk and low-dimensional semiconductors in Proc. of the 9th Int. Conf. on Hot Carriers in Semiconductors, edited by K. Hess, J. P. Leburton, U. Ravaioli (Plenum, New York, 1996) | |||
| H. Kostial, M. Asche, R. Hey, K. Ploog, B. Kehrer, W. Quade, E. Schöll: Low temperature breakdown and current filamentation in n-type GaAs with homogeneous and partially ordered Si doping Semicond. Sci. Technol. 10, 775 (1995) | |||
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| B. Kehrer, W. Quade, E. Schöll: Monte Carlo simulation of impact-ionization-induced breakdown and current filamentation in $\delta$-doped GaAs Phys. Rev. B 51, 7725 (1995) | ||
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| W. Quade, E. Schöll, F. Rossi, C. Jacoboni: Quantum theory of impact ionization in coherent high-field semiconductor transport Phys. Rev. B 50, 7398 (1994) | ||
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| W. Quade, G. Hüpper, E. Schöll, T. Kuhn: Monte Carlo simulation of the nonequilibrium phase transition in p-type Ge at impurity breakdown Phys. Rev. B 49, 13408 (1994) | ||
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| G. Hüpper, K. Pyragas, E. Schöll: Complex spatiotemporal dynamics of current filaments in crossed electric and magnetic fields Phys. Rev. B 48, 17633 (1993) | ||
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| G. Hüpper, K. Pyragas, E. Schöll: Complex dynamics of current filaments in the low temperature impurity breakdown regime of semiconductors Phys. Rev. B 47, 15515 (1993) | ||
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| T. Kuhn, G. Hüpper, W. Quade, A. Rein, E. Schöll, L. Varani, L. Reggiani: Microscopic analysis of noise and nonlinear dynamics in p-type Germanium Phys. Rev. B 48, 1478 (1993) | ||
| W. Quade, E. Schöll, M. Rudan: Impact ionization within the hydrodynamic approach to semiconductor transport Sol. State El. 36, 1493 (1993) | |||
| Paper REI92 not found in database! | |||
| G. Hüpper, E. Schöll, A. Rein: Nonlinear and Chaotic Oscillations in Semiconductors under the Influence of a Transverse Magnetic Field: The Dynamic Hall Effect Mod. Phys. Lett. B 6, 1001 (1992) | |||
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| G. Hüpper, E. Schöll: Dynamic Hall Effect as a Mechanism for Self-Sustained Oscillations and Chaos in Semiconductors Phys. Rev. Lett. 66, 2372 (1991) | ||
| R. E. Kunz, E. Schöll: Globally coupled dynamics of breathing current filaments in semiconductors Z. Phys. B 89, 289 (1992) | |||
| E. Schöll: Nonlinear Dynamics, Phase Transitions and Chaos in Semiconductors in Handbook on Semiconductors, edited by P. T. Landsberg (North Holland, Amsterdam, 1992) | |||
| W. Quade, M. Rudan, E. Schöll: Hydrodynamic Simulation of Impact-Ionization Effects in P-N Junctions IEEE Trans. CAD 10, 1287 (1991) | |||
| H. Naber, E. Schöll: Mode-locking of self-generated oscillations in a semiconductor model for low-temperature impurity breakdown Z. Phys. B 78, 305 (1990) | |||
| H. Naber, E. Schöll: Bit-number cumulants as a correlation measure of self-generated oscillations in a semiconductor model for low-temperature impurity breakdown Z. Phys. B 78, 301 (1990) | |||
| E. Schöll, D. Drasdo: Nonlinear dynamics of breathing current filaments in n-GaAs and p-Ge Z. Phys. B 81, 183 (1990) | |||
| E. Schöll: From Hot Electron Transport Theory to Macroscopic Nonlinear and Chaotic Behaviour by Impact Ionization in Semiconductors Sol. State El. 32, 1129 (1989) | |||
| E. Schöll: Theoretical Approaches to Nonlinear and Chaotic Dynamics of Generation-Recombination Processes in Semiconductors Appl. Phys. A 48, 95 (1989) | |||
| G. Hüpper, E. Schöll, L. Reggiani: Global Bifurcation and Hysteresis of Self-generated Oscillations in a Microscopic Model of Nonlinear Transport in p-Ge Sol. State El. 32, 1787 (1989) | |||
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| E. Schöll: Instabilities in Semiconductors including Chaotic Phenomena Physica Scripta T29, 152 (1989) | ||
| E. Schöll, W. Quade: Effect of impact ionization on hot carrier energy and momentum relaxation in semiconductors J. Phys. C 20, L 861 (1987) | |||
| E. Schöll, J. Parisi, B. Röhricht, J. Peinke, R. P. Huebener: Spatial Correlations of Chaotic Oscillations in the Post-Breakdown Regime of p-Ge Phys. Lett. A 119, 419 (1987) | |||
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| E. Schöll: Impact Ionization Mechanism for Self-Generated Chaos in Semiconductors Phys. Rev. B 34, 1395 (1986) | ||
| E. Schöll: Equal Areas Rules for Filamentation in SNDC Elements Sol. State El. 29, 687 (1986) | |||
| E. Schöll: Influence of Boundaries on Dissipative Structures in the Schlögl Model Z. Phys. B 62, 245 (1986) | |||
| E. Schöll: Stability of Generation-Recombination Induced Dissipative Structures in Semiconductors Z. Phys. B 52, 321 (1983) | |||
| E. Schöll: Current Layers and Filaments in a Semiconductor Model with an Impact Ionization Induced Instability Z. Phys. B 48, 153 (1982) | |||
| E. Schöll, W. Heisel, W. Prettl: Impact Ionization Induced Negative Far-Infrared Photoconductivity in n-GaAs Z. Phys. B 47, 285 (1982) | |||
| E. Schöll: Bistability and Nonequilibrium Phase Transitions in a Semiconductor Recombination Model with Impact Ionization of Donors Z. Phys. B 46, 23 (1982) | |||
| D. J. Robbins, P. T. Landsberg, E. Schöll: Threshold Switching as a Generation-Recombination Induced Non-Equilibrium Phase Transition (II) phys. status solidi (a) 65, 353 (1981) | |||
| E. Schöll: Formal Conditions for Non-Equilibrium Phase Transitions Proc. Roy. Soc. A 365, 511 (1979) | |||
| E. Schöll, P. T. Landsberg: Semiconductor models for first and second order non-equilibrium phase transitions Proc. Roy. Soc. A 365, 495 (1979) | |||
| P. T. Landsberg, D. J. Robbins, E. Schöll: Threshold Switching as a Generation-Recombination Induced Non-Equilibrium Phase Transition phys. status solidi (a) 50, 423 (1978) | |||
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