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Topics in the modelling of phase change memory elements
I will discuss collaborative work on the computational modelling of
electrical circuit elements (PCRAM) that use different phases of
chalcogenide materials (in particular GeSbTe alloys) to store
information in a non-volatile manner. Particular features that we have
modelled include some of the challenges to multi-level programming of
these devices by purely electrical means, as well as an approach to
the modelling of spontaneous rapid relaxation oscillations that can
appear due to threshold switching in the semiconductor phase.
This is joint work with C David Wright (Exeter) and Jorge Vazquez Diosdado (Essex).